Double rule integrated circuit layouts for a dual transmission gate

ABSTRACT

Exemplary embodiments for an exemplary dual transmission gate and various exemplary integrated circuit layouts for the exemplary dual transmission gate are disclosed. These exemplary integrated circuit layouts represent double-height, also referred to as double rule, integrated circuit layouts. These double rule integrated circuit layouts include a first group of rows from among multiple rows of an electronic device design real estate and a second group of rows from among the multiple rows of the electronic device design real estate to accommodate a first metal layer of a semiconductor stack. The first group of rows can include a first pair of complementary metal-oxide-semiconductor field-effect (CMOS) transistors, such as a first p-type metal-oxide-semiconductor field-effect (PMOS) transistor and a first n-type metal-oxide-semiconductor field-effect (NMOS) transistor, and the second group of rows can include a second pair of CMOS transistors, such as a second PMOS transistor and a second NMOS transistor. These exemplary integrated circuit layouts disclose various configurations and arrangements of various geometric shapes that are situated within an oxide diffusion (OD) layer, a polysilicon layer, a metal diffusion (MD) layer, the first metal layer, and/or a second metal layer of a semiconductor stack. In the exemplary embodiments to follow, the various geometric shapes within the first metal layer are situated within the multiple rows of the electronic device design real estate and the various geometric shapes within the OD layer, the polysilicon layer, the MD layer, and/or the second metal layer are situated within multiple columns of the electronic device design real estate.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a divisional of U.S. patent application Ser.No. 16/021,847, filed Jun. 28, 2018, which is incorporated herein byreference in its entirety.

BACKGROUND

A transmission gate, sometimes referred to as an analog switch,represents an electronic element that selectively passes a signal froman input terminal to an output terminal. Often times, the transmissiongate includes a p-type metal-oxide-semiconductor field-effect (PMOS)transistor and a n-type metal-oxide-semiconductor field-effect (NMOS)transistor. The PMOS transistor and NMOS transistor can be complementarybiased using a complementary clocking signal such that the PMOStransistor and NMOS transistor are collectively conducting, namely, inan on-state, to pass the signal from the input terminal to the outputterminal. Alternatively, the complementary clocking signal can cause thePMOS transistor and NMOS transistor to be non-conducting, namely, in anoff-state, to prevent the signal from being passed from the inputterminal to the output terminal.

In some situations, the complementary clocking signal can also be usedto bias another transmission gate to form a dual transmission gate. Thisdual transmission gate can include a first input terminal correspondingto the transmission gate, a second input terminal corresponding to thisother transmission gate, and a common output terminal shared by thetransmission gate and this other transmission gate. In these situations,the complementary clocking signal can cause the transmission gate topass the signal from the first input terminal to the common outputterminal and can prevent this other transmission gate from passing thesecond signal from the second input terminal to the common outputterminal. Alternatively, the complementary clocking signal can preventthe transmission gate from passing the signal from the first inputterminal to the common output terminal and cause this other transmissiongate to pass the second signal from the second input terminal to thecommon output terminal.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a schematic diagram of an exemplary dual transmissiongate according to an exemplary embodiment of the present disclosure;

FIG. 2 through FIG. 32 illustrate various exemplary integrated circuitlayouts for the exemplary dual transmission gate according to exemplaryembodiments of the present disclosure;

FIG. 33 illustrates a schematic diagram of an exemplary synchronousflip-flop having the exemplary dual transmission gate according to anexemplary embodiment of the present disclosure; and

FIG. 34A and FIG. 34B illustrate exemplary layout floor plans of theexemplary synchronous flip-flop according to exemplary embodiments ofthe present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over a second feature in the description that followsmay include embodiments in which the first and second features areformed in direct contact and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition does not in itselfdictate a relationship between the various embodiments and/orconfigurations described.

OVERVIEW

Exemplary embodiments for an exemplary dual transmission gate andvarious exemplary integrated circuit layouts for the exemplary dualtransmission gate are disclosed. These exemplary integrated circuitlayouts represent double-height, also referred to as double rule,integrated circuit layouts. These double rule integrated circuit layoutsinclude a first group of rows from among multiple rows of an electronicdevice design real estate and a second group of rows from among themultiple rows of the electronic device design real estate to accommodatea first metal layer of a semiconductor stack. The first group of rowscan include a first pair of complementary metal-oxide-semiconductorfield-effect (CMOS) transistors, such as a first p-typemetal-oxide-semiconductor field-effect (PMOS) transistor and a firstn-type metal-oxide-semiconductor field-effect (NMOS) transistor, and thesecond group of rows can include a second pair of CMOS transistors, suchas a second PMOS transistor and a second NMOS transistor. Theseexemplary integrated circuit layouts disclose various configurations andarrangements of various geometric shapes that are situated within anoxide diffusion (OD) layer, a polysilicon layer, a metal diffusion (MD)layer, the first metal layer, and/or a second metal layer of asemiconductor stack. In the exemplary embodiments to follow, the variousgeometric shapes within the first metal layer are situated within themultiple rows of the electronic device design real estate and thevarious geometric shapes within the OD layer, the polysilicon layer, theMD layer, and/or the second metal layer are situated within multiplecolumns of the electronic device design real estate.

Exemplary Dual Transmission Gate

FIG. 1 illustrates a schematic diagram of an exemplary dual transmissiongate according to an exemplary embodiment of the present disclosure. Inthe exemplary embodiment illustrated in FIG. 1, a dual transmission gate100 includes a first transmission gate 102 to selectively provide afirst signal pathway between a first terminal 150 and a second terminal152 and a second transmission gate 104 to selectively provide a secondsignal pathway between the second terminal 152 and a third terminal 154.In an exemplary embodiment, the first signal pathway and the secondsignal pathway represent bi-directional signal pathways. In thisexemplary embodiment, the first transmission gate 102 can selectivelyroute various signals between the first terminal 150 and the secondterminal 152 and the second transmission gate 104 can selectively routevarious signals between the second terminal 152 and the third terminal154. As illustrated in FIG. 1, the first transmission gate 102 includesa first p-type metal-oxide-semiconductor field-effect (PMOS) transistorP1 and a first n-type metal-oxide-semiconductor field-effect (NMOS)transistor N1 and the second transmission gate 104 includes a secondPMOS transistor P2 and a second NMOS transistor N2.

The first transmission gate 102 selectively provides the first signalpathway in response to a first clocking signal 156 being at a firstlogical level, such as a logical zero, and a second clocking signal 158being at a second logical level, such as a logical one. In an exemplaryembodiment, the first clocking signal 156 and the second clocking signal158 represent a differential clocking signal with the first clockingsignal 156 being a complement of the second clocking signal 158. In theexemplary embodiment illustrated in FIG. 1, the PMOS transistor P1 isconducting, namely, in an on-state, when the first clocking signal 156is at the first logical level, such as the logical zero, and the NMOStransistor N1 is conducting, namely, in the on-state, when the secondclocking signal 158 is at the second logical level, such as the logicalone, to provide the first signal pathway between the first terminal 150and the second terminal 152. In this situation, the PMOS transistor P2is non-conducting, namely, in an off-state, when the second clockingsignal 158 is at the second logical level, such as the logical one, andthe NMOS transistor N2 is non-conducting, namely, in the off-state, whenthe first clocking signal 156 is at the first logical level, such as thelogical zero.

The second transmission gate 104 selectively provides the second signalpathway in response to the first clocking signal 156 being at the secondlogical level, such as the logical one, and the second clocking signal158 being at the first logical level, such as the logical zero. In theexemplary embodiment illustrated in FIG. 1, the PMOS transistor P2 isconducting, namely, in the on-state, when the second clocking signal 158is at the first logical level, such as the logical zero, and the NMOStransistor N2 is conducting, namely, in the on-state, when the firstclocking signal 156 is at the second logical level, such as the logicalone, to provide the second signal pathway between the second terminal152 and the third terminal 154. In this situation, the PMOS transistorP1 is non-conducting, namely, in an off-state, when the first clockingsignal 156 is at the second logical level, such as the logical one, andthe NMOS transistor N1 is non-conducting, namely, in the off-state, whenthe second clocking signal 158 is at the first logical level, such asthe logical zero.

Exemplary Integrated Circuit Layouts for the Exemplary Dual TransmissionGate

FIG. 2 through FIG. 32 illustrate various exemplary integrated circuitlayouts for the exemplary dual transmission gate according to exemplaryembodiments of the present disclosure. FIG. 2 through FIG. 32 illustratevarious exemplary integrated circuit layouts for an exemplary dualtransmission gate, such as the dual transmission gate 100 to provide anexample. The exemplary integrated circuit layouts for the exemplary dualtransmission gate to be described below include various geometric shapesthat are situated within one or more interconnection layers, such as anoxide diffusion (OD) layer, a polysilicon layer, a metal diffusion (MD)layer, a first metal layer, and/or a second metal layer to provide someexamples, of a semiconductor stack. As to be described in more detailbelow, these geometric shapes can be situated within an electronicdevice design real estate. Herein, the terms “first metal layer” and“second metal layer” are merely used to distinguish between metal layersof the semiconductor layer stack. The terms “first metal layer” and“second metal layer” need not be the first metal layer and the secondmetal layer, respectively, of the semiconductor layer stack. Rather,those skilled in the relevant art(s) will recognize the terms “firstmetal layer” and “second metal layer” can be any two metal layers of thesemiconductor layer stack. In an exemplary embodiment, the first metallayer and the second metal layer represent a METAL 1 layer and a METAL 2layer within the semiconductor stack.

As to be illustrated in FIG. 2 through FIG. 32, the electronic devicedesign real estate can be characterized as including multiple rows alonga first direction 250, such as along an “x” axis of a Cartesiancoordinate system, and multiple columns along a second direction 252,such as along a “y” axis of the Cartesian coordinate system, forplacement of the various geometric shapes of the exemplary integratedcircuit layouts. In an exemplary embodiment, the OD layer and/or thefirst metal layer of the semiconductor stack are situated along themultiple rows in the first direction 250. In this exemplary embodiment,the one or more polysilicon layers, the MD layer and/or the second metallayer of the semiconductor stack are situated along the multiple columnsin the second direction 252. In some situations, a cell structure of theelectronic device design real estate can include a limited number ofrows along the first direction 250 to accommodate the first metal layer.For example, the cell structure of the electronic device design realestate can include can include three rows, such as the rows 202.1through 202.3 or the rows 202.4 through 202.6 to provide some examples,along the first direction 250 to form a single-height integrated circuitlayout. In this example, the single-height integrated circuit layout canaccommodate the first metal layer using these three rows. However, toaccommodate the first metal layer using more rows, the exemplaryintegrated circuit layouts illustrated in FIG. 2 through FIG. 32 utilizedouble-height, also referred to as double rule, integrated circuitlayouts to increase the number of rows along the first direction 250. Asto be described in more detail below, these double rule integratedcircuit layouts include a first group of rows from among the multiplerows and a second group of rows from among the multiple rows which canbe both utilized to accommodate the first metal layer. As to bedescribed in further detail below, the first group of rows can include afirst pair of complementary metal-oxide-semiconductor field-effect(CMOS) transistors, such as the PMOS transistor P1 and the NMOStransistor N1 as described in FIG. 1, and the second group of rows caninclude a second pair of CMOS transistors, such as the PMOS transistorP2 and the NMOS transistor N2 as described in FIG. 1.

As illustrated in FIG. 2, the exemplary integrated circuit layout 200includes the first metal layer having one or more regions of one or moreconductive materials such as tungsten (W), aluminum (Al), copper (Cu),gold (Au), silver (Ag), or platinum (Pt) to provide some examples,situated within the multiple rows 202.1 through 202.6 along the firstdirection 250. In the exemplary embodiment illustrated in FIG. 2, theone or more regions of the conductive material situated within the firstmetal layer are illustrated using a vertical shading. Moreover, themultiple rows 202.1 through 202.6 include various oxide diffusion (OD)regions, illustrated using a diagonal shading, situated within themultiple rows 202.1 through 202.6 along the first direction 250 forforming active layers of various transistors of the dual transmissiongate, such as the PMOS transistor P1, the PMOS transistor P2, the NMOStransistor N1, and/or the NMOS transistor N2 as described in FIG. 1.

As additionally illustrated in FIG. 2, the exemplary integrated circuitlayout 200 includes the MD layer having one or more regions of one ormore conductive materials such as tungsten (W), aluminum (Al), copper(Cu), gold (Au), silver (Ag), or platinum (Pt) to provide some examples,situated within the multiple columns 204.1 through 204.7 along thesecond direction 252. In the exemplary embodiment illustrated in FIG. 2,the one or more regions of the conductive material situated within theMD layer are illustrated using a solid white shading. Moreover, theexemplary integrated circuit layout 200 includes the polysilicon layerhaving one or more regions of a polysilicon material, illustrated usinga dotted shading, situated within the multiple columns 204.1 through204.7 along the second direction 252. In the exemplary embodimentillustrated in FIG. 2, the exemplary integrated circuit layout 200further includes various via structures, illustrated as a squared “x” inFIG. 2, to form interconnections between the multiple rows 202.1 through202.6 and the multiple columns 204.1 through 204.7. In an exemplaryembodiment, the various via structures described herein can representthrough hole via structures, blind via structures, buried viastructures, or any other suitable via structures that will be apparentto those skilled in the relevant art(s) without departing from thespirit and scope of the present disclosure.

In the exemplary embodiment illustrated in FIG. 2, a first region of theone or more conductive materials situated within the first metal layerextending along the row 202.2 in the first direction 250 represents thefirst terminal 150 as described in FIG. 1. As illustrated in FIG. 2, thefirst terminal 150 is electrically connected to a conductive region 206of the one or more conductive materials situated within the MD layerextending along the column 204.3 in the second direction 252 using a viastructure. The conductive region 206 is electrically connected to afirst OD region corresponding to the PMOS transistor P1 and a second ODregion corresponding to the NMOS transistor N1 extending along the row202.1 in the first direction 250 to form a source/drain region of thePMOS transistor P1 and along the row 202.3 to form a source/drain regionof the NMOS transistor N1, respectively.

In the exemplary embodiment illustrated in FIG. 2, a second region ofthe one or more conductive materials situated within the first metallayer extending along the row 202.5 in the first direction 250represents the third terminal 154 as described in FIG. 1. As illustratedin FIG. 2, the third terminal 154 is electrically connected to aconductive region 208 of the one or more conductive materials situatedwithin the MD layer extending along the column 204.3 in the seconddirection 252 using a via structure. The conductive region 208 iselectrically connected to a third OD region corresponding to the PMOStransistor P2 and a fourth OD region corresponding to the NMOStransistor N2 extending along the row 202.4 in the first direction 250to form a source/drain region of the PMOS transistor P2 and along therow 202.6 to form a source/drain region of the NMOS transistor N2,respectively.

In the exemplary embodiment illustrated in FIG. 2, a third region of theone or more conductive materials situated within the first metal layerextending along the row 202.1 in the first direction 250 represents thefirst clocking signal 156 as described in FIG. 1. As illustrated in FIG.2, the first clocking signal 156 is electrically connected to aconductive region 210 of the one or more conductive materials situatedwithin the MD layer extending along the column 204.1 in the seconddirection 252 using a via structure. The conductive region 210 iselectrically connected to a conductive region 212 of the one or moreconductive materials situated within the first metal layer extendingalong the row 202.6 in the first direction 250. The conductive region212 is electrically connected to a polysilicon region 214 of thepolysilicon material situated within the one or more polysilicon layersextending along the column 204.4 in the second direction 252 using a viastructure. The polysilicon region 214 overlaps the fourth OD regioncorresponding to the NMOS transistor N2 to form a gate region of theNMOS transistor N2. As additionally illustrated in FIG. 2, the firstclocking signal 156 is electrically connected to a polysilicon region216 of the polysilicon material situated within the one or morepolysilicon layers extending along the column 204.4 in the seconddirection 252 using a via structure. The polysilicon region 216 overlapsthe first OD region corresponding to the PMOS transistor P1 to form agate region of the PMOS transistor P1.

Referring back to FIG. 2, a fourth region of the one or more conductivematerials situated within the first metal layer extending along the row202.4 in the first direction 250 represents the second clocking signal158 as described in FIG. 1. As illustrated in FIG. 2, the secondclocking signal 158 is electrically connected to a polysilicon region218 of the polysilicon material situated within the one or morepolysilicon layers extending along the column 204.4 in the seconddirection 252 using a via structure. The polysilicon region 218 overlapsthe second OD region corresponding to the NMOS transistor N1 to form agate region of the NMOS transistor N1 and the third OD regioncorresponding to the PMOS transistor P2 to form a gate region of thePMOS transistor P2.

In the exemplary embodiment illustrated in FIG. 2, a fourth region ofthe one or more conductive materials situated within the MD layerextending along the column 204.5 in the second direction 252 representsthe second terminal 152 as described in FIG. 1. The second terminal 152is electrically connected to the first OD region corresponding to thePMOS transistor P1, the second OD region corresponding to the NMOStransistor N1, the third OD region corresponding to the PMOS transistorP2, and the fourth OD region corresponding to the NMOS transistor N2 toform a source/drain region of the PMOS transistor P1, a source/drainregion of the NMOS transistor N1, a source/drain region of the PMOStransistor P2, and a source/drain region of the NMOS transistor N2,respectively.

Alternative Exemplary Integrated Circuit Layouts for the Exemplary DualTransmission Gate

The discussion of FIG. 3 through FIG. 32 of the exemplary integratedcircuit layout 300 through exemplary integrated circuit layout 3200,respectively, to follow briefly outlines differences between theseexemplary integrated circuit layouts and the exemplary integratedcircuit layout 200. Although not described in further detail, theexemplary integrated circuit layout 300 through exemplary integratedcircuit layout 3200 can include different configurations andarrangements for the first terminal 150, the second terminal 152, thethird terminal 154, the first clocking signal 156, and/or the secondclocking signal 158 than as illustrated in FIG. 2. Those skilled in therelevant art(s) will readily recognize these different configurationsand arrangements for the first terminal 150, the second terminal 152,the third terminal 154, the first clocking signal 156, and/or the secondclocking signal 158 from FIG. 3 through FIG. 32 without departing fromthe spirit and scope of the present disclosure. For convenience, thefirst terminal 150, the second terminal 152, the third terminal 154, thefirst clocking signal 156, the second clocking signal 158, the PMOStransistor P1, the NMOS transistor N1, the PMOS transistor P2, and theNMOS transistor N2 are illustrated in FIG. 3 through FIG. 32. Asillustrated in FIG. 3 through FIG. 32, the first terminal 150electrically connects a source/drain region of the NMOS transistor N1and a source/drain region of the PMOS transistor P1 as illustrated inFIG. 1. The second terminal 152 electrically connects a source/drainregion of the NMOS transistor N1, a source/drain region of the PMOStransistor P1, a source/drain region of the PMOS transistor P2, and asource/drain region of the NMOS transistor P2 as illustrated in FIG. 1.The third terminal 154 electrically connects a source/drain region ofthe NMOS transistor N2 and a source/drain region of the PMOS transistorP2 as illustrated in FIG. 1. The first clocking signal 156 electricallyconnects a gate region of the PMOS transistor P1 and a gate region ofthe NMOS transistor N2. The second clocking signal 158 electricallyconnects a gate region of the NMOS transistor N1 and a gate region ofthe PMOS transistor P2

The exemplary integrated circuit layout 300 through exemplary integratedcircuit layout 3200 of the exemplary dual transmission gate similarlyinclude various geometric shapes that are situated within an oxidediffusion (OD) layer, a polysilicon layer, a metal diffusion (MD) layer,a first metal layer, and/or a second metal layer. These geometric shapesof the exemplary integrated circuit layout 300 through exemplaryintegrated circuit layout 3200 can be situated within an electronicdevice design real estate in a substantially similar manner as theexemplary integrated circuit layout 200 as described above in FIG. 2. Inthe exemplary integrated circuit layout 300 through exemplary integratedcircuit layout 3200, the OD layer and/or one the first metal layer ofthe semiconductor stack are situated along the multiple rows in thefirst direction 250. In exemplary integrated circuit layout 300 throughexemplary integrated circuit layout 3200, the one or more polysiliconlayers, the MD layer and/or the second metal layer of the semiconductorstack are situated along the multiple columns in the second direction252.

The exemplary integrated circuit layout 300 as illustrated in FIG. 3 andthe exemplary integrated circuit layout 400 as illustrated in FIG. 4include alternative connections between the first clocking signal 156and the conductive region 212 as illustrated in FIG. 2. In the exemplaryembodiment illustrated in FIG. 3, this alternative connection can beimplemented using the polysilicon material situated within the one ormore polysilicon layers. Alternately, in the exemplary embodimentillustrated in FIG. 4, this alternative connection can be implementedusing the one or more conductive materials situated within the secondmetal layer.

The exemplary integrated circuit layout 500 as illustrated in FIG. 5through the exemplary integrated circuit layout 2500 as illustrated inFIG. 25 include alternative configurations and arrangements for the PMOStransistor P1, the NMOS transistor N1, the PMOS transistor P2, and theNMOS transistor N2 as illustrated in FIG. 2. In the exemplary embodimentillustrated in FIG. 2, the PMOS transistor P1, the NMOS transistor N1,the PMOS transistor P2, and the NMOS transistor N2 are situated alongthe row 202.1, the row 202.3, the row 202.4, and the row 202.6,respectively. However, in the exemplary embodiment illustrated in FIG.5, the NMOS transistor N1, the PMOS transistor P1, the NMOS transistorN2, and the PMOS transistor P2 are alternatively situated along the row202.1, the row 202.3, the row 202.4, and the row 202.6, respectively, inthe exemplary integrated circuit layout 500.

In the exemplary embodiment illustrated in FIG. 2, the PMOS transistorP1, the NMOS transistor N1, the PMOS transistor P2, and the NMOStransistor N2 are situated along the column 204.4. However, in theexemplary embodiment illustrated in FIG. 6, the PMOS transistor P1 issituated along the column 204.6 and the NMOS transistor N1, the PMOStransistor P2, and the NMOS transistor N2 are situated along the column204.4. In the exemplary embodiment illustrated in FIG. 7, the PMOStransistor P1 and the NMOS transistor N2 are situated along the column204.6 and the NMOS transistor N1 and the PMOS transistor P2 are situatedalong the column 204.4. In the exemplary embodiment illustrated in FIG.8, the NMOS transistor N1 is situated along the column 204.6 and thePMOS transistor P1, the PMOS transistor P2, and the NMOS transistor N2are situated along the column 204.4. In the exemplary embodimentillustrated in FIG. 9, the NMOS transistor N1 and the PMOS transistor P2are situated along the column 204.6 and the PMOS transistor P1 and theNMOS transistor N2 are situated along the column 204.4. In the exemplaryembodiments illustrated in FIG. 10, FIG. 11, FIG. 14, FIG. 15, and FIG.18, the NMOS transistor N1 and the PMOS transistor P1 are situated alongthe column 204.5 and the PMOS transistor P2 and the NMOS transistor N2are situated along the column 204.3. In the exemplary embodimentsillustrated in FIG. 12, FIG. 13, FIG. 16, and FIG. 17, the NMOStransistor N1 and the PMOS transistor P1 are situated along the column204.6 and the PMOS transistor P2 and the NMOS transistor N2 are situatedalong the column 204.4. In the exemplary embodiments illustrated in FIG.10, FIG. 11, FIG. 14, FIG. 15, in FIG. 20, FIG. 21, FIG. 22, FIG. 23,FIG. 24, and FIG. 25, the NMOS transistor N1 and the PMOS transistor P1are situated along the column 204.5 and the PMOS transistor P2 and theNMOS transistor N2 are situated along the column 204.3.

In the exemplary integrated circuit layout 2600 as illustrated in FIG.26, the first clocking signal 156 and the second clocking signal 158traverse substantially similar distances to the OD layer of the PMOStransistor P1 and the OD layer of the NMOS transistor N2 and to the ODlayer of the NMOS transistor N1 and the OD layer of the PMOS transistorP2, respectively. For example, a length of a conductive region 2602 ofthe one or more conductive materials situated within the MD layerextending along the column 204.1 in the second direction 252 is equalto, or approximately equal to, a length of a conductive region 2604 ofthe one or more conductive materials situated within the MD layerextending along the column 204.7. The exemplary integrated circuitlayout 2700 as illustrated in FIG. 27, the exemplary integrated circuitlayout 2800 as illustrated in FIG. 28, exemplary integrated circuitlayout 2900 as illustrated in FIG. 29, the exemplary integrated circuitlayout 3000 as illustrated in FIG. 30, the exemplary integrated circuitlayout 3100 as illustrated in FIG. 31 and the exemplary integratedcircuit layout 3200 as illustrated in FIG. 32 include alternativeconnections for the first clocking signal 156 and the second clockingsignal 158 as illustrated in FIG. 26. In the exemplary embodimentillustrated in FIG. 27, these alternative connections for the firstclocking signal 156 and the second clocking signal 158 can beimplemented using the polysilicon material situated within the one ormore polysilicon layers. In the exemplary embodiment illustrated in FIG.28, these alternative connections for the first clocking signal 156 andthe second clocking signal 158 can be implemented using the one or moreconductive materials situated within the second metal layer. In theexemplary embodiment illustrated in FIG. 29, these alternativeconnections for the first clocking signal 156 can be implemented usingthe one or more conductive materials situated within the MD layer andthe second clocking signal 158 can be implemented using the polysiliconmaterial situated within the one or more polysilicon layers. In theexemplary embodiment illustrated in FIG. 30, these alternativeconnections for the first clocking signal 156 can be implemented usingthe one or more conductive materials situated within the second metallayer and the second clocking signal 158 can be implemented using thepolysilicon material situated within the one or more polysilicon layers.In the exemplary embodiment illustrated in FIG. 31, these alternativeconnections for the first clocking signal 156 can be implemented usingthe one or more conductive materials situated within the second metallayer and the second clocking signal 158 can be implemented using theone or more conductive materials situated within the MD layer. In theexemplary embodiment illustrated in FIG. 32, these alternativeconnections for the first clocking signal 156 and the second clockingsignal 158 can be implemented using the one or more conductive materialssituated within the MD layer.

Exemplary Implementation of the Exemplary Dual Transmission Gate

FIG. 33 illustrates a schematic diagram of an exemplary synchronousflip-flop having the exemplary dual transmission gate according to anexemplary embodiment of the present disclosure. In the exemplaryembodiment illustrated in FIG. 33, an exemplary flip-flop 3300 can beused to store data (D) to be written to a memory device, such asvolatile memory and/or non-volatile memory, and/or to be read from thememory device. The volatile memory can be implemented as random-accessmemory (RAM), which requires power to maintain its stored information,such as dynamic random-access memory (DRAM), a static random-accessmemory (SRAM), and/or a non-volatile random-access memory (NVRAM), oftenreferred to as a flash memory, to provide some examples. Thenon-volatile memory, which can maintain its stored information even whennot powered, can be implemented as a programmable read-only memory(PROM), a one-time programmable ROM (OTP), an erasable programmableread-only memory (EPROM) and/or an electrically erasable programmableread-only memory (EEPROM) to provide some examples. As illustrated inFIG. 33, the flip-flop 3300 includes sense enable (SE) circuitry 3302,first clocking circuitry 3304, second clocking circuitry 3306,multiplexing circuitry 3308, master latching circuitry 3310, slavelatching circuitry 3312, and output circuitry 3314.

As illustrated in FIG. 33, the SE circuitry 3302 performs a logicalinverting operation on a SE control signal, denoted as SE in FIG. 33, toprovide a complement of the SE control signal, denoted as SEB in FIG.33. Similarly, in FIG. 33, the first clocking circuitry 3304 performs alogical inverting operation on a clocking signal, denoted as CLKA inFIG. 33, to provide a complement of the clocking signal, denoted as CLKBin FIG. 33. Likewise, the second clocking circuitry 3306 performs alogical inverting operation on the CLKB to provide a complement of theCLKB, denoted as CLKBB in FIG. 33. Although the SE circuitry 3302, thefirst clocking circuitry 3304, and the second clocking circuitry 3306are illustrated using logical INVERTER gates in FIG. 33, those skilledin the relevant art(s) will recognize the SE circuitry 3302, the firstclocking circuitry 3304, and the second clocking circuitry 3306 can besimilarly implemented using other basic logical gates, such as logicalAND gates, logical OR gates, logical XOR gates, and/or logical XNORgates to provide some examples, and/or combinations of the other basiclogical gates without departing from the spirit and scope of the presentdisclosure.

In the exemplary embodiment, the multiplexing circuitry 3308 selectivelyprovides a stream of data, denoted as D in FIG. 33 and/or a stream oftesting data, denoted as sense input (SI) in FIG. 33, to the masterlatching circuitry 3310. As illustrated in FIG. 33, the multiplexingcircuitry 3308 includes a transmission gate 3316 and a transmission gate3318. The SI represents a known sequence of data that passes through theflip-flop 3300 to be used to operational test the memory device. Thetransmission gate 3316 selectively provides the SI to the masterlatching circuitry 3310 in response to the SE being at the first logicallevel, such as a logical one, and the SEB being at the second logicallevel, such as a logical zero. The transmission gate 3318 selectivelyprovides the D to the master latching circuitry 3310 in response to theSE being at the second logical level, such as a logical zero, and theSEB being at the first logical level, such as a logical one.

As additionally illustrated in FIG. 33, the master latching circuitry3310 includes an NMOS transistor N3, an NMOS transistor N4, a PMOStransistor P3, a PMOS transistor P4, a transmission gate 3320, and alogical INVERTER gate 3322. As illustrated in FIG. 33, the transmissiongate 3320 aligns the D or the SI from the multiplexing circuitry 3308with the CLKB and the CLKBB. When the CLKB is at the second logicallevel, such as a logical zero, the CLKBB is at the first logical level,such as a logical one, the transmission gate 3320 selectively providesthe D or the SI from the multiplexing circuitry 3308. In the exemplaryembodiment illustrated in FIG. 33, the NMOS transistor N3, the NMOStransistor N4, the PMOS transistor P3, the PMOS transistor P4, and thelogical INVERTER gate 3322 are arranged to form a first latch circuitthat is responsive to the CLKB and the CLKBB. When the CLKB is at thefirst logical level, such as a logical one, the CLKBB is at the secondlogical level, such as a logical zero, the first latch circuit passesthe D or the SI from the multiplexing circuitry 3308 onto the slavelatching circuitry 3312. Otherwise, when the CLKB is at the secondlogical level, such as a logical zero, the CLKBB is at the first logicallevel, the transmission gate 3320 is isolated from the first latchcircuit. In this configuration and arrangement, the first latch circuitstores the D or the SI provided by the multiplexing circuitry 3308.

Moreover, the slave latching circuitry 3312 includes an NMOS transistorN5, an NMOS transistor N6, a PMOS transistor P5, a PMOS transistor P6, atransmission gate 3324, and a logical INVERTER gate 3326. As illustratedin FIG. 33, the transmission gate 3324 aligns the D or the SI from themaster latching circuitry 3310 with the CLKB and the CLKBB. When theCLKB is at the first logical level, such as a logical one, the CLKBB isat the second logical level, such as a logical zero, the transmissiongate 3324 selectively provides the D or the SI from the master latchingcircuitry 3310. In the exemplary embodiment illustrated in FIG. 33, theNMOS transistor N5, the NMOS transistor N6, the PMOS transistor P5, thePMOS transistor P6, and the logical INVERTER gate 3326 are arranged toform a second latch circuit that is responsive to the CLKB and theCLKBB. When the CLKB is at the first logical level, such as a logicalone, the CLKBB is at the second logical level, such as a logical zero,the second latch circuit passes the D or the SI from the master latchingcircuitry 3310 onto output circuitry 3314. Otherwise, when the CLKB isat the second logical level, such as a logical zero, the CLKBB is at thefirst logical level, the transmission gate 3324 is isolated from thesecond latch circuit. In this configuration and arrangement, the secondlatch circuit stores the D or the SI provided by the master latchingcircuitry 3310.

In the exemplary embodiment illustrated in FIG. 33, the output circuitry3314 performs a logical inverting operation on the D or the SI storedsituated within the slave latching circuitry 3312 to provide an outputdata, denoted as Q in FIG. 33. Although the output circuitry 3314 isillustrated using a logical INVERTER gate in FIG. 33, those skilled inthe relevant art(s) will recognize the output circuitry 3314 can besimilarly implemented using other basic logical gates, such as logicalAND gates, logical OR gates, logical XOR gates, logical XNOR gates, orlogical NOT gates to provide some examples, and/or combinations of theother basic logical gates without departing from the spirit and scope ofthe present disclosure.

Exemplary Real Estate Layout of the Exemplary Synchronous Flip-Flop

FIG. 34A and FIG. 34B illustrate exemplary layout floor plans of theexemplary synchronous flip-flop according to exemplary embodiments ofthe present disclosure. The exemplary layout floor plans as illustratedin FIG. 34A and FIG. 34B represent exemplary layout floor plans for theexemplary flip-flop 3300 as described in FIG. 33. As illustrated in FIG.34A and FIG. 34B, a first exemplary layout floor plan 3400 and a secondexemplary layout floor plan 3410, respectively, represent double-height,also referred to as double rule, layout floor plans as described above.These double rule layout floor plans allow the transmission gate 3316,the transmission gate 3318, the transmission gate 3320, and/or thetransmission gate 3322 to be implemented using the various exemplaryintegrated circuit layouts for the exemplary dual transmission gate asdescribed in FIG. 2 through FIG. 32.

In the exemplary embodiment illustrated in FIG. 34A, the first exemplarylayout floor plan 3400 includes, starting from the leftmost side, realestate for the output circuitry 3314, the slave latching circuitry 3312,the first clocking circuitry 3304, the second clocking circuitry 3306,the master latching circuitry 3310, the multiplexing circuitry 3308, andthe SE circuitry 3302 as described above in FIG. 33. As illustrated inFIG. 34A, the output circuitry 3314, the slave latching circuitry 3312,the master latching circuitry 3310, the multiplexing circuitry 3308, andthe SE circuitry 3302 represent double rule layout floor plans and thefirst clocking circuitry 3304 and the second clocking circuitry 3306represent single rule layout floor plans. A vertical height of thesedouble rule layout floor plans is twice a vertical height of thesesingle layout floor plans as illustrated in FIG. 34A. Additionally, thereal estate for the slave latching circuitry 3312, as illustrated inFIG. 34A, includes real estate 3402 a and real estate 3402 b allocatedfor the implementation of the transmission gate 3324 and the real estatefor the master latching circuitry 3310 includes real estate 3404 a andreal estate 3404 b allocated for the implementation of the transmissiongate 3320. Using various combinations of the real estate 3402 a, thereal estate 3402 b, the real estate 3404 a, and the real estate 3404 b,the transmission gate 3320 and the transmission gate 3324 can beimplemented using the various exemplary integrated circuit layout asdescribed in FIG. 2 through FIG. 32. For example, the real estate 3402 bcan be allocated to implement the transmission gate 3324 and the realestate 3404 a can be allocated to implement the transmission gate 3320.In this example, the transmission gate 3320 includes the PMOS transistorP1 and the NMOS transistor N1 and the transmission gate 3324 includesthe PMOS transistor P2 and the PMOS transistor P2 as described in FIG.10 through FIG. 25. As such, the transmission gate 3320 and thetransmission gate 3324 can be implemented using any of the exemplaryintegrated circuit layout 1000 through the exemplary integrated circuitlayout 2500. As another example, the real estate 3402 a can be allocatedto implement the transmission gate 3324 and the real estate 3404 b canbe allocated to implement the transmission gate 3320. In this example,the transmission gate 3324 includes the PMOS transistor P1 and the NMOStransistor N1 and the transmission gate 3320 includes the PMOStransistor P2 and the PMOS transistor P2 as described in FIG. 10 throughFIG. 25. As such, the transmission gate 3320 and the transmission gate3324 can be implemented using any of the exemplary integrated circuitlayout 1000 through the exemplary integrated circuit layout 2500.

Alternatively, as illustrated in FIG. 34B, the real estate for the slavelatching circuitry 3312, as illustrated in FIG. 34A, includes realestate 3408 a and real estate 3408 b allocated for the implementation ofthe transmission gate 3324 and the real estate for the master latchingcircuitry 3310 includes real estate 3410 a and real estate 3410 ballocated for the implementation of the transmission gate 3320. Usingvarious combinations of the real estate 3408 a, the real estate 3408 b,the real estate 3410 a, and the real estate 3410 b, the transmissiongate 3320 and the transmission gate 3324 can be implemented using thevarious exemplary integrated circuit layout as described in FIG. 2through FIG. 32. For example, the real estate 3408 b can be allocated toimplement the transmission gate 3324 and the real estate 3410 a can beallocated to implement the transmission gate 3320. In this example, thetransmission gate 3320 includes the PMOS transistor P1 and the NMOStransistor N1 and the transmission gate 3324 includes the PMOStransistor P2 and the PMOS transistor P2 as described in FIG. 10 throughFIG. 25. As such, the transmission gate 3320 and the transmission gate3324 can be implemented using any of the exemplary integrated circuitlayout 1000 through the exemplary integrated circuit layout 2500. Asanother example, the real estate 3408 a can be allocated to implementthe transmission gate 3324 and the real estate 3410 b can be allocatedto implement the transmission gate 3320. In this example, thetransmission gate 3324 includes the PMOS transistor P1 and the NMOStransistor N1 and the transmission gate 3320 includes the PMOStransistor P2 and the PMOS transistor P2 as described in FIG. 10 throughFIG. 25. As such, the transmission gate 3320 and the transmission gate3324 can be implemented using any of the exemplary integrated circuitlayout 1000 through the exemplary integrated circuit layout 2500.

As illustrated in FIG. 34A and FIG. 34B, the real estate for themultiplexing circuitry 3308 includes real estate 3406 a and real estate3406 b allocated for the implementation of the transmission gate 3316and the transmission gate 3318. Using the real estate 3406 a and thereal estate 3406 a, the transmission gate 3316 and the transmission gate3318 can be implemented using the various exemplary integrated circuitlayout as described in FIG. 2 through FIG. 32. For example, the realestate 3406 a can be allocated to implement the transmission gate 3316and the real estate 3406 b can be allocated to implement thetransmission gate 3318. In this example, the transmission gate 3316includes the PMOS transistor P1 and the NMOS transistor N1 and thetransmission gate 3318 includes the PMOS transistor P2 and the PMOStransistor P2 as described in FIG. 2 through FIG. 19 or FIG. 26 throughFIG. 32. As such, the transmission gate 3316 and the transmission gate3318 can be implemented using any of the exemplary integrated circuitlayout 200 through the exemplary integrated circuit layout 1900 or theexemplary integrated circuit layout 2600 through the exemplaryintegrated circuit layout 3200.

CONCLUSION

The foregoing Detailed Description discloses a dual transmission gate.The dual transmission gate includes a first p-typemetal-oxide-semiconductor field-effect (PMOS) transistor, a first n-typemetal-oxide-semiconductor field-effect (NMOS) transistor, a second PMOStransistor, a second NMOS transistor, a first region, a second region,and a third region. The first PMOS transistor is situated within a firstrow from among a multiple rows of an electronic device design realestate and receives a first clocking signal. The first NMOS transistoris situated within a second row from among the multiple rows andreceives a second clocking signal. The second PMOS transistor issituated within a third row from among the multiple rows and receivesthe second clocking signal. The second NMOS transistor is situatedwithin a fourth row from among the multiple rows and receives the firstclocking signal. The first region and the second region corresponds tothe first clocking signal and is situated within a first interconnectionlayer of a semiconductor stack along the first row and the fourth row,respectively. The third region is situated within a secondinterconnection layer of the semiconductor stack along a first columnfrom among multiple columns of the electronic device design real estateand electrically connects the first region and the second region.

The foregoing Detailed Description additionally discloses another dualtransmission gate. This other dual transmission gate includes a firstpair of complementary metal-oxide-semiconductor field-effect (CMOS)transistors, a second pair of CMOS transistors, a first region, a secondregion, a third region, a fourth region, a fifth region, and a sixthregion. The first pair of CMOS) transistors is situated within a firstcolumn from among multiple columns of an electronic device design realestate and is arranged to form a first transmission gate. The firsttransmission gate routes a first signal between a first terminal and asecond terminal in response to a first clocking signal being at a firstlogical level and a second clocking signal being at a second logicallevel. The second pair of CMOS transistors is situated within a secondcolumn from among the multiple columns is arranged to form a secondtransmission gate. The second transmission gate routes a second signalbetween the second terminal and a third terminal in response to thefirst clocking signal being at the second logical level and the secondclocking signal being at the first logical level. The first region andthe second region correspond to the first clocking signal and aresituated within a first interconnection layer along a first row and asecond row, respectively, from among multiple rows of the electronicdevice design real estate. The third region is situated within a secondinterconnection layer of the semiconductor stack along a second columnfrom among the multiple columns of the electronic device design realestate and electrically connects the first region and the second region.The fourth region and the fifth region correspond to the second clockingsignal and are situated within the first interconnection layer of thesemiconductor stack along a third row and a fourth row, respectively,from among the multiple rows. The sixth region is situated within thesecond interconnection layer of the semiconductor stack along a thirdcolumn from among the multiple columns of the electronic device designreal estate and electrically connects the fourth region and the fifthregion.

The foregoing Detailed Description further discloses a dual transmissiongate having a first input terminal, a second input terminal, and anoutput terminal. This further dual transmission gate includes a firstp-type metal-oxide-semiconductor field-effect (PMOS) transistor, a firstn-type metal-oxide-semiconductor field-effect (NMOS) transistor, asecond PMOS transistor, a second NMOS transistor, a first region, asecond region, and a third region. The first PMOS transistor has a firstsource/drain region corresponding to the first input terminal, a secondsource/drain region corresponding to the output terminal, and a firstgate region which receives a first clocking signal. The first NMOStransistor has a third source/drain region corresponding to the firstinput terminal, a fourth source/drain region corresponding to the outputterminal, and a second gate region which receives a second clockingsignal. The second PMOS transistor has a fifth source/drain regioncorresponding to the second input terminal, a sixth source/drain regioncorresponding to the output terminal, and a third gate region whichreceives the first clocking signal. The second NMOS transistor has aseventh source/drain region corresponding to the second input terminal,an eighth source/drain region corresponding to the output terminal, anda fourth gate region which receives the second clocking signal. Thefirst region and the second region correspond to the first clockingsignal and are situated within a first interconnection layer of asemiconductor stack along a first row and a second row, respectively,from among a multiple rows of an electronic device design real estate.The third region is situated within a second interconnection layer ofthe semiconductor stack along a first column from among multiple columnsof the electronic device design real estate and electrically connectsthe first region and the second region.

The foregoing Detailed Description referred to accompanying figures toillustrate exemplary embodiments consistent with the disclosure.References in the foregoing Detailed Description to “an exemplaryembodiment” indicates that the exemplary embodiment described caninclude a particular feature, structure, or characteristic, but everyexemplary embodiment may not necessarily include the particular feature,structure, or characteristic. Moreover, such phrases are not necessarilyreferring to the same exemplary embodiment. Further, any feature,structure, or characteristic described in connection with an exemplaryembodiment can be included, independently or in any combination, withfeatures, structures, or characteristics of other exemplary embodimentswhether or not explicitly described.

The foregoing Detailed Description is not meant to limiting. Rather, thescope of the disclosure is defined only in accordance with the followingclaims and their equivalents. It is to be appreciated that the foregoingDetailed Description, and not the following Abstract section, isintended to be used to interpret the claims. The Abstract section canset forth one or more, but not all exemplary embodiments, of thedisclosure, and thus, is not intended to limit the disclosure and thefollowing claims and their equivalents in any way.

The exemplary embodiments described within foregoing DetailedDescription have been provided for illustrative purposes, and are notintended to be limiting. Other exemplary embodiments are possible, andmodifications can be made to the exemplary embodiments while remainingwithin the spirit and scope of the disclosure. The foregoing DetailedDescription has been described with the aid of functional buildingblocks illustrating the implementation of specified functions andrelationships thereof. The boundaries of these functional buildingblocks have been arbitrarily defined herein for the convenience of thedescription. Alternate boundaries can be defined so long as thespecified functions and relationships thereof are appropriatelyperformed.

Embodiments of the disclosure can be implemented in hardware, firmware,software, or any combination thereof. Embodiments of the disclosure canalso be implemented as instructions stored on a machine-readable medium,which can be read and executed by one or more processors. Amachine-readable medium can include any mechanism for storing ortransmitting information in a form readable by a machine (e.g., acomputing circuitry). For example, a machine-readable medium can includenon-transitory machine-readable mediums such as read only memory (ROM);random access memory (RAM); magnetic disk storage media; optical storagemedia; flash memory devices; and others. As another example, themachine-readable medium can include transitory machine-readable mediumsuch as electrical, optical, acoustical, or other forms of propagatedsignals (e.g., carrier waves, infrared signals, digital signals, etc.).Further, firmware, software, routines, instructions can be describedherein as performing certain actions. However, it should be appreciatedthat such descriptions are merely for convenience and that such actionsin fact result from computing devices, processors, controllers, or otherdevices executing the firmware, software, routines, instructions, etc.

The foregoing Detailed Description fully revealed the general nature ofthe disclosure that others can, by applying knowledge of those skilledin relevant art(s), readily modify and/or adapt for various applicationssuch exemplary embodiments, without undue experimentation, withoutdeparting from the spirit and scope of the disclosure. Therefore, suchadaptations and modifications are intended to be within the meaning andplurality of equivalents of the exemplary embodiments based upon theteaching and guidance presented herein. It is to be understood that thephraseology or terminology herein is for the purpose of description andnot of limitation, such that the terminology or phraseology of thepresent specification is to be interpreted by those skilled in relevantart(s) in light of the teachings herein.

What is claimed is:
 1. A dual transmission gate, comprising: a firstpair of complementary metal-oxide-semiconductor field-effect (CMOS)transistors, situated within a first column from among a plurality ofcolumns of an electronic device design real estate, arranged to form afirst transmission gate, the first transmission gate being configured toroute a first signal between a first terminal and a second terminal inresponse to a first clocking signal being at a first logical level and asecond clocking signal being at a second logical level; a second pair ofCMOS transistors, situated within a second column from among theplurality of columns, arranged to form a second transmission gate, thesecond transmission gate being configured to route a second signalbetween the second terminal and a third terminal in response to thefirst clocking signal being at the second logical level and the secondclocking signal being at the first logical level; a first region and asecond region corresponding to the first clocking signal situated withina first interconnection layer of a semiconductor stack along a first rowand a second row, respectively, from among a plurality of rows of theelectronic device design real estate; a third region, situated within asecond interconnection layer of the semiconductor stack along a thirdcolumn from among the plurality of columns, connected to the firstregion and the second region; a fourth region and a fifth regioncorresponding to the second clocking signal situated within the firstinterconnection layer of the semiconductor stack along a third row and afourth row, respectively, from among the plurality of rows; and a sixthregion, situated within the second interconnection layer of thesemiconductor stack along a fourth column from among the plurality ofcolumns, connected to the fourth region and the fifth region.
 2. Thedual transmission gate of claim 1, wherein the first interconnectionlayer comprises: a first metal layer of the semiconductor stack, andwherein the second interconnection layer comprises: a polysilicon layerof the semiconductor stack; an oxide diffusion (OD) layer of thesemiconductor stack; or a second metal layer of the semiconductor stack.3. The dual transmission gate of claim 1, wherein a length of the thirdregion is equal to a length of the sixth region.
 4. The dualtransmission gate of claim 1, wherein the first pair of CMOS transistorscomprises: a first p-type metal-oxide-semiconductor field-effect (PMOS)transistor situated within the first row; and a first n-typemetal-oxide-semiconductor field-effect (NMOS) transistor situated withinthe third row, and wherein the second pair of CMOS transistors comprisesa second PMOS transistor situated within the second row; and a secondNMOS transistor situated within the fourth row.
 5. The dual transmissiongate of claim 4, further comprising: a seventh region corresponding tothe first terminal situated along a fifth column from among theplurality of columns, the seventh region being connected to a firstsource/drain region of the first PMOS transistor and a firstsource/drain region of the first NMOS transistor; an eighth regioncorresponding to the third terminal situated along a sixth column fromamong the plurality of columns, the eighth region being connected to afirst source/drain region of the second PMOS transistor and a firstsource/drain region of the second NMOS transistor; and a ninth regioncorresponding to the second terminal situated along a seventh columnfrom among the plurality of columns, the ninth region connected to asecond source/drain region of the first PMOS transistor, a secondsource/drain region of the first NMOS transistor, a second source/drainregion of the second PMOS transistor, and a second source/drain regionof the second NMOS transistor.
 6. The dual transmission gate of claim 4,wherein the first region is connected to a first region of polysiliconmaterial situated within a polysilicon layer of the semiconductor stackalong the first column, the first region of polysilicon material beingconnected to a gate region of the first PMOS transistor, wherein thesecond region is connected to a second region of polysilicon materialsituated within the polysilicon layer along the second column, thesecond region of polysilicon material being connected to a gate regionof the second PMOS transistor, wherein the fourth region is connected toa third region of polysilicon material situated within the polysiliconlayer along the first column, the third region of polysilicon materialbeing connected to a gate region of the first PMOS transistor, andwherein the fifth region is connected to a fourth region of polysiliconmaterial situated within the polysilicon layer along the second column,the fourth region of polysilicon material being connected to a gateregion of the second NMOS transistor.
 7. A dual transmission gate,comprising: a first pair of transistors situated within a first columnfrom among a plurality of columns of an electronic device design realestate, a first transistor from among the first pair of transistorsbeing situated along a first row from among a plurality of rows of theelectronic device design real estate and a second transistor from amongthe first pair of transistors being situated along a second row fromamong the plurality of rows; a second pair of transistors situatedwithin a second column from among the plurality of columns, a thirdtransistor from among the second pair of transistors being situatedalong a third row from among the plurality of rows and a fourthtransistor from among the second pair of transistors being situatedalong a fourth row from among the plurality of rows; a first region anda second region situated within a first interconnection layer of thesemiconductor stack along the first row and the third row; a thirdregion, situated within a second interconnection layer of thesemiconductor stack along a third column from among a plurality ofcolumns, connecting the first region and the second region; a fourthregion and a fifth region situated within the first interconnectionlayer of the semiconductor stack along the second row and the fourthrow, respectively; and a sixth region, situated within the secondinterconnection layer of the semiconductor stack along a fourth columnfrom among the plurality of columns connecting the fourth region and thefifth region.
 8. The dual transmission gate of claim 7, wherein thefirst interconnection layer comprises: a first metal layer of thesemiconductor stack, and wherein the second interconnection layercomprises: a polysilicon layer of the semiconductor stack; an oxidediffusion (OD) layer of the semiconductor stack; or a second metal layerof the semiconductor stack.
 9. The dual transmission gate of claim 7,wherein a length of the third region is equal to a length of the sixthregion.
 10. The dual transmission gate of claim 7, wherein the firsttransistor comprises: a first p-type metal-oxide-semiconductorfield-effect (PMOS) transistor, wherein the second transistor comprises:a first n-type metal-oxide-semiconductor field-effect (NMOS) transistor,and wherein the third transistor comprises: a second PMOS transistorsituated within the second row, and wherein the fourth transistorcomprises: a second NMOS transistor situated within the fourth row. 11.The dual transmission gate of claim 10, further comprising: a seventhregion situated along a fifth column from among the plurality ofcolumns, the seventh region being connected to a first source/drainregion of the first PMOS transistor and a first source/drain region ofthe first NMOS transistor; an eighth region situated along a sixthcolumn from among the plurality of columns, the eighth region beingconnected to a first source/drain region of the second PMOS transistorand a first source/drain region of the second NMOS transistor; and aninth region along a seventh column from among the plurality of columns,the ninth region being connected to a second source/drain region of thefirst PMOS transistor, a second source/drain region of the first NMOStransistor, a second source/drain region of the second PMOS transistor,and a second source/drain region of the second NMOS transistor.
 12. Thedual transmission gate of claim 7, wherein the first region is connectedto a first region of polysilicon material situated within a polysiliconlayer of the semiconductor stack along the first column, the firstregion of polysilicon material being connected to a gate region of thefirst transistor, wherein the second region is connected to a secondregion of polysilicon material situated within the polysilicon layeralong the second column, the second region of polysilicon material beingconnected to a gate region of the third transistor, wherein the fourthregion is connected to a third region of polysilicon material situatedwithin the polysilicon layer along the first column, the third region ofpolysilicon material being connected to a gate region of the secondtransistor, and wherein the fifth region is connected to a fourth regionof polysilicon material situated within the polysilicon layer along thesecond column, the fourth region of polysilicon material being connectedto a gate region of the fourth transistor.
 13. The dual transmissiongate of claim 7, wherein the first pair of transistors is arranged toform a first transmission gate, and wherein the second pair oftransistors is arranged to form a second transmission gate.
 14. A dualtransmission gate, comprising: a first region and a second regionsituated within a first interconnection layer of a semiconductor stackalong a first row and a second row, respectively, from among a pluralityof rows of the electronic device design real estate; a first pair oftransistors, situated within a first column from among a plurality ofcolumns of the electronic device design real estate, a first transistorfrom among the first pair of transistors being connected to the firstregion and a second transistor from among the first pair of transistorsbeing connected to the second region; a third region and a fourth regionsituated within the first interconnection layer along a third row and afourth row, respectively, from among the plurality of rows; a secondpair of transistors, situated within a second column from among theplurality of columns, a third transistor from among the second pair oftransistors being connected to the third region and a fourth transistorfrom among the second pair of transistors being connected to the fourthregion; and a fifth region and a sixth region, situated within a secondinterconnection layer of the semiconductor stack along a third columnand a fourth column, respectively, from among the plurality of columns,the fifth region connecting the first region and the third region andthe sixth region connecting the second region and the fourth region. 15.The dual transmission gate of claim 14, wherein the firstinterconnection layer comprises: a first metal layer of thesemiconductor stack, and wherein the second interconnection layercomprises: a polysilicon layer of the semiconductor stack; an oxidediffusion (OD) layer of the semiconductor stack; or a second metal layerof the semiconductor stack.
 16. The dual transmission gate of claim 14,wherein a length of the fifth region is equal to a length of the sixthregion.
 17. The dual transmission gate of claim 14, wherein the firsttransistor comprises: a first p-type metal-oxide-semiconductorfield-effect (PMOS) transistor, wherein the second transistor comprises:a first n-type metal-oxide-semiconductor field-effect (NMOS) transistor,and wherein the third transistor comprises: a second PMOS transistorsituated within the second row, and wherein the fourth transistorcomprises: a second NMOS transistor situated within the fourth row. 18.The dual transmission gate of claim 17, further comprising: a seventhregion situated along a fifth column from among the plurality ofcolumns, the seventh region being connected to a first source/drainregion of the first PMOS transistor and a first source/drain region ofthe first NMOS transistor; an eighth region situated along a sixthcolumn from among the plurality of columns, the eighth region beingconnected to a first source/drain region of the second PMOS transistorand a first source/drain region of the second NMOS transistor; and aninth region along a seventh column from among the plurality of columns,the ninth region being connected to a second source/drain region of thefirst PMOS transistor, a second source/drain region of the first NMOStransistor, a second source/drain region of the second PMOS transistor,and a second source/drain region of the second NMOS transistor.
 19. Thedual transmission gate of claim 14, wherein the first region isconnected to a first region of polysilicon material situated within apolysilicon layer of the semiconductor stack along the first column, thefirst region of polysilicon material being connected to a gate region ofthe first transistor, wherein the second region is connected to a secondregion of polysilicon material situated within the polysilicon layeralong the second column, the second region of polysilicon material beingconnected to a gate region of the third transistor, wherein the fourthregion is connected to a third region of polysilicon material situatedwithin the polysilicon layer along the first column, the third region ofpolysilicon material being connected to a gate region of the secondtransistor, and wherein the fifth region is connected to a fourth regionof polysilicon material situated within the polysilicon layer along thesecond column, the fourth region of polysilicon material being connectedto a gate region of the fourth transistor.
 20. The dual transmissiongate of claim 14, wherein the first pair of transistors is arranged toform a first transmission gate, and wherein the second pair oftransistors is arranged to form a second transmission gate.